对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
K4S641632C-TC10T0 | Samsung Semiconductor | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54 | - | |||||
K7N801801A-TC10 | Samsung Semiconductor | ZBT SRAM, 512KX18, 5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | - | |||||
AD | RC28F128P33T85A | Micron | 并列式闪存,Flash, 8MX16, 85ns, PBGA64 | |||||
K3N5U1000E-TC120 | Samsung Semiconductor | MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | - | |||||
K4S641632C-TC10RH | Samsung Semiconductor | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54 | - | |||||
K7A203200A-TC150 | Samsung Semiconductor | Cache SRAM, 64KX32, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | - | |||||
K6F2008S2M-TC120 | Samsung Semiconductor | Standard SRAM, 256KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 | - | |||||
K4S560432D-TC1H | Samsung Semiconductor | Synchronous DRAM, 64MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | - | |||||
K4S641622B-TC10 | Samsung Semiconductor | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54 | - | |||||
K4S640432E-TC1L | Samsung Semiconductor | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | - | |||||
K6R1016C1D-TC12 | Samsung Semiconductor | Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | - | |||||
K4S643234E-TC10 | Samsung Semiconductor | Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | - | |||||
K6E0808C1E-TC15T | Samsung Semiconductor | Standard SRAM, 32KX8, 15ns, CMOS, PDSO28 | - | |||||
K6R4004V1B-TC12T | Samsung Semiconductor | Standard SRAM, 1MX4, 12ns, CMOS, PDSO32 | - | |||||
K3P4C1000D-TC150 | Samsung Semiconductor | MASK ROM, 512KX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | - | |||||
K7A203200A-TC15 | Samsung Semiconductor | Cache SRAM, 64KX32, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | - | |||||
K3N6C1000F-TC100 | Samsung Semiconductor | MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | - | |||||
K4S641632C-TC10 | Samsung Semiconductor | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | - | |||||
K7A203600A-TC14 | Samsung Semiconductor | Cache SRAM, 64KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | - | |||||
K7N403601M-TC15 | Samsung Semiconductor | ZBT SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | - | |||||
K3P5C1000F-TC15 | Samsung Semiconductor | MASK ROM, 1MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | - |